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insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c v ces = 600v i c = 48a, t c = 100c t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.65v features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ?5 s short circuit soa ? square rbsoa ? 100% of the parts tested for 4x rated current (i lm ) ? positive v ce (on) temperature co-efficient ? ultra fast soft recovery co-pak diode ? tight parameter distribution ? lead free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e gate collector emitter irgp4063dpbf absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 96 i c @ t c = 100c continuous collector current 48 i cm pulse collector current 200 i lm clamped inductive load current 192 a i f @ t c = 25c diode continous forward current 96 i f @ t c = 100c diode continous forward current 48 i fm diode maximum forward current 192 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 330 w p d @ t c = 100c maximum power dissipation 170 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.45 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 0.92 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40

g c e c g g e c irgp4063d-epbf

notes: v cc = 80% (v ces ), v ge = 20v, l = 200 h, r g = 10 . this is only applied to to-247ac package. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 150 a ct6 v (br)ces / t j temperature coeff. of breakdown voltage ?0.30?v/c v ge = 0v, i c = 1ma (25c-175c) ct6 ?1.652.14 i c = 48a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 48a, v ge = 15v, t j = 150c 9,10,11 ?2.05? i c = 48a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.4ma 9, 10, v ge(th) / tj threshold voltage temp. coefficient ? -21 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) 11, 12 gfe forward transconductance ? 32 ? s v ce = 50v, i c = 48a, pw = 80 s i ces collector-to-emitter leakage current ? 1.0 150 a v ge = 0v, v ce = 600v ? 450 1000 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.95 2.91 v i f = 48a 8 ?1.45? i f = 48a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 95 140 i c = 48a 24 q ge gate-to-emitter charge (turn-on) ? 28 42 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) ? 35 53 v cc = 400v e on turn-on switching loss ? 625 1141 i c = 48a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss ? 1275 1481 j r g = 10 , l = 200 h, l s = 150nh, t j = 25c e total total switching loss ? 1900 2622 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 60 78 i c = 48a, v cc = 400v, v ge = 15v ct4 t r rise time ? 40 56 ns r g = 10 h, l s = 150nh, t j = 25c t d(off) turn-off delay time ? 145 176 t f fall time ? 35 46 e on turn-on switching loss ? 1625 ? i c = 48a, v cc = 400v, v ge =15v 13, 15 e off turn-off switching loss ? 1585 ? j r g =10 h, l s =150nh, t j = 175c ct4 e total total switching loss ? 3210 ? energy losses include tail & diode reverse recovery wf1, wf2 t d(on) turn-on delay time ? 55 ? i c = 48a, v cc = 400v, v ge = 15v 14, 16 t r rise time ? 45 ? ns r g = 10 , l = 200 h, l s = 150nh ct4 t d(off) turn-off delay time ? 165 ? t j = 175c wf1 t f fall time ? 45 ? wf2 c ies input capacitance ? 3025 ? pf v ge = 0v 23 c oes output capacitance ? 245 ? v cc = 30v c res reverse transfer capacitance ? 90 ? f = 1.0mhz t j = 175c, i c = 192a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 10 , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 22, ct3 rg = 10 , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode ? 845 ? j t j = 175c 17, 18, 19 t rr diode reverse recovery time ? 115 ? ns v cc = 400v, i f = 48a 20, 21 i rr peak reverse recovery current ? 40 ? a v ge = 15v, rg = 10 h, l s = 150nh wf3 conditions

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 25 50 75 100 125 150 175 200 t c (c) 0 10 20 30 40 50 60 70 80 90 100 i c ( a ) 0 25 50 75 100 125 150 175 200 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 175c single pulse dc

fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 8 - typ. diode forward characteristics tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 9 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0.0 1.0 2.0 3.0 4.0 v f (v) 0 20 40 60 80 100 120 140 160 180 200 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 24a i ce = 48a i ce = 96a 0 5 10 15 v ge (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) t j = 25c t j = 175c

fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 200 h; v ce = 400v, i ce = 48a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 i f (a) 0 5 10 15 20 25 30 35 40 45 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 0 25 50 75 100 125 r g ( ) 10 15 20 25 30 35 40 45 i r r ( a ) 0 50 100 150 i c (a) 0 1000 2000 3000 4000 5000 6000 e n e r g y ( j ) e off e on

fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 48a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 48a; l = 600 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 0 200 400 600 800 1000 di f /dt (a/ s) 10 15 20 25 30 35 40 45 i r r ( a ) 0 20 40 60 80 100 i f (a) 0 100 200 300 400 500 600 700 800 900 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 8 1012141618 v ge (v) 4 6 8 10 12 14 16 18 t i m e ( s ) 50 100 150 200 250 300 350 400 c u r r e n t ( a ) 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 255075100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v 0 500 1000 1500 di f /dt (a/ s) 1000 1500 2000 2500 3000 3500 4000 q r r ( n c ) 10 22 100 47 48a 24a 96a

fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.2774 0.000908 0.3896 0.003869 0.2540 0.030195 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri

fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v dc 4x dut vcc r sh

fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -40 -30 -20 -10 0 10 20 30 40 50 60 -0.15 -0.05 0.05 0.15 0.25 time ( s) i rr (a) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 time ( s) v ce (v) -100 0 100 200 300 400 500 600 i ce (a) v ce i ce -100 0 100 200 300 400 500 600 700 -0.40 0.10 0.60 1.10 time( s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) e off loss 5% v ce 5% i ce 90% i ce tf -100 0 100 200 300 400 500 600 700 6.20 6.40 6.60 6.80 7.00 time ( s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) e on test current 90% test 10% test current 5% v ce tr

to-247ac package is not recommended for surface mount application.

ye ar 1 = 2001 dat e code part number internat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mb l e d on ww 35, 2001 note: "p" in assembly line position example: wi t h as s e mb l y this is an irfpe30 lot code 5657

data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site.

ir world headquarters: 101 n. sepulveda blvd.., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information .

assembly ye ar 0 = 2000 as s e mb le d on w w 35, 2000 in t h e as s e m b l y l in e "h " e x am p l e : t h is is an ir g p 30 b 12 0 k d -e lot code 5657 with assembly part number dat e code in t e r n at io n al r e c t if ie r logo 035h 5 6 5 7 week 35 line h lot code n ote: "p " in as s em bly lin e pos ition indicates "l ead-f ree" to-247ad package is not recommended for surface mount application.

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